| SiC wafer 6” Specification as following: 150 mm outer diameter with 47.5 mm primary flat length 4H, n-type, 4 degrees off-axis, <0.5 micropipes/cm2, For low-R SiC, resistivity 0.015-0.025 ohm-cm on bulk surfaces diameter:150mm (+/- 0.5mm) thickness: 500um (+/- 25um) warp <60umbow <40um TTV <15um Si-side epi-grade polish |
